| Infineon Technologies | ¥ 4.2714 | 2655 | BF999 - RF 超高频 | | |
| Infineon Technologies | ¥ 1.3781 | 11910 | 12V 30mA 200mW N 通道 SOT-143 MOSFET | | |
| Infineon Technologies | ¥ 61.3264 | 4176 | IC FET 射频 LDMOS 45W H-30265-2 | | |
| Infineon Technologies | ¥ 326.5080 | 1501 | IC FET 射频 LDMOS 130W H-30260-2 | | |
| Infineon Technologies | ¥ 0.0000 | 46 | 场效应晶体管射频 LDMOS 60W H37265-3 | | |
| Infineon Technologies | ¥ 153.8780 | 1501 | 场效应晶体管射频 LDMOS 170W H37248-2 | | |
| Infineon Technologies | ¥ 1110.2235 | 67 | 场效应晶体管射频 LDMOS 150W H37248-2 | | |
| Infineon Technologies | ¥ 167.7220 | 1501 | 场效应晶体管射频 65V 2.17GHZ H37248-2 | | |
| Infineon Technologies | ¥ 0.0615 | 2000 | 场效应晶体管射频 8V 800MHZ SOT343 | | |
| Infineon Technologies | ¥ 0.0000 | 89 | 场效应晶体管射频 LDMOS 60W H37265-2 | | |
| Infineon Technologies | ¥ 171.2320 | 1501 | 场效应晶体管射频 LDMOS 170W H37248-2 | | |
| Infineon Technologies | ¥ 1029.5312 | 68 | 场效应晶体管射频 LDMOS 150W H37248-2 | | |
| Infineon Technologies | ¥ 0.4006 | 1095 | MOSFET N 沟道 8V 25MA SOT143-4 | | |
| Infineon Technologies | ¥ 0.4006 | 2554 | MOSFET N 沟道 8V 25MA SOT143-4 | | |
| Infineon Technologies | ¥ 3.6224 | 70 | MOSFET N 通道双 8V 25MA SOT-363 | | |
| Infineon Technologies | ¥ 4.6264 | 46 | MOSFET N 通道双 8V 25MA SOT-363 | | |
| Infineon Technologies | ¥ 3.3966 | 66 | MOSFET N 通道双 8V 20MA SOT-363 | | |
| Infineon Technologies | ¥ 3.3966 | 23 | MOSFET N 通道双 8V 25MA SOT-363 | | |
| Infineon Technologies | ¥ 122.4244 | 628 | IC FET 射频 LDMOS 45W H-30265 | | |
| Infineon Technologies | ¥ 259.2526 | 1102 | IC FET 射频 LDMOS 150W H-30260-2 | | |
| Infineon Technologies | ¥ 121.1380 | 1501 | IC FET 射频 LDMOS 45W H-30265-2 | | |
| Infineon Technologies | ¥ 121.1380 | 1501 | IC FET 射频 LDMOS 45W H-31265-2 | | |
| Infineon Technologies | ¥ 190.4920 | 1501 | IC FET 射频 LDMOS 150W PG-64248-2 | | |
| Infineon Technologies | ¥ 0.0000 | 72 | IC FET 射频 LDMOS 150W PG-64248-2 | | |
| Infineon Technologies | ¥ 89.9910 | 4380 | IC FET 射频 LDMOS 300W H-30275-4 | | |
| Infineon Technologies | ¥ 92.3512 | 2037 | IC FET 射频 LDMOS 55W H-36265-2 | | |
| Infineon Technologies | ¥ 83.6933 | 2090 | IC FET 射频 LDMOS 55W H-37265-2 | | |
| Infineon Technologies | ¥ 0.0000 | 51 | 场效应晶体管射频 65V 900MHZ H-30248-2 | | |
| Infineon Technologies | ¥ 222.9497 | 1633 | 场效应晶体管射频 65V 894MHZ H-36260-2 | | |
| Infineon Technologies | ¥ 270.6700 | 1501 | 场效应晶体管射频 65V 894MHZ H-36260-2 | | |