California Eastern Laboratories(CEL)-分立半导体器件,射频场效应晶体管 (FET)、场效应晶体管 (MOSFET) 产品 (66)
在达森电子购买 66 高品质 California Eastern Laboratories(CEL) 下的 分立半导体器件、射频场效应晶体管 (FET)、场效应晶体管 (MOSFET)。非常适合工程师和业余爱好者。价格最优，质量无与伦比。
| 型号 | 制造商 | 单价 | 库存 | 描述 | 数据文档 | 操作 |
|---|---|---|---|---|---|---|
| California Eastern Laboratories(CEL) | ￥ 59.8264 | 14520 | 通道 8V 1A GAAS HFET |  | ||
| California Eastern Laboratories(CEL) | ￥ 21.1509 | 4968 | 射频场效应晶体管 4V 12GHZ 4MICROX | | ||
| California Eastern Laboratories(CEL) | ￥ 2.0954 | 33605 | 小信号 N 沟道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 3.7803 | 17126 | 射频场效应晶体管 4V 20GHZ SOT343 | | ||
| California Eastern Laboratories(CEL) | ￥ 17.5086 | 12888 | 射频场效应晶体管 4V 20GHZ 4MICROX | | ||
| California Eastern Laboratories(CEL) | ￥ 17.2530 | 34814 | 射频场效应晶体管 4V 12GHZ 4MICROX | | ||
| California Eastern Laboratories(CEL) | ￥ 2.4844 | 42228 | 射频 MOSFET PHEMT FET 2V | | ||
| California Eastern Laboratories(CEL) | ￥ 4.2840 | 1780 | HJ-FET NCH 13.5DB S02 | | ||
| California Eastern Laboratories(CEL) | ￥ 0.4439 | 10506 | HJ-FET NCH 10DB S02 | | ||
| California Eastern Laboratories(CEL) | ￥ 0.0000 | 84 | 场效应晶体管射频 4V 4GHZ M04 | | ||
| California Eastern Laboratories(CEL) | ￥ 5.4205 | 14250 | 小信号 N 沟道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 7.1258 | 33325 | 小信号 N 沟道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 7.1258 | 34541 | 小信号 N 沟道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 41.0380 | 2230 | 小信号 N 沟道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 7.8091 | 28715 | 小信号 N 沟道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 8.3950 | 44028 | 小信号 N 沟道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 44.6356 | 2330 | 射频 K 波段，砷化镓，NC | | ||
| California Eastern Laboratories(CEL) | ￥ 0.0000 | 42 | 场效应晶体管射频 4V 20GHZ S03 | | ||
| California Eastern Laboratories(CEL) | ￥ 39.2186 | 37070 | 射频功率 N 通道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 2.1816 | 14049 | 场效应晶体管射频 20V 900MHZ 79A-PKG | | ||
| California Eastern Laboratories(CEL) | ￥ 8.6137 | 7716 | 小信号 N 沟道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 1.5336 | 4410 | 射频功率 N 通道 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 0.0090 | 23664 | 射频 N 沟道功率 MOSFET | | ||
| California Eastern Laboratories(CEL) | ￥ 0.0000 | 84 | RF MOSFET N 通道，30V，3A | | ||
| California Eastern Laboratories(CEL) | ￥ 4.5133 | 10877 | 硅中功率LDMOSFET，R | | ||
| California Eastern Laboratories(CEL) | ￥ 22.4360 | 2310 | 场效应晶体管射频 4V 2GHZ SOT-343 | | ||
| California Eastern Laboratories(CEL) | ￥ 1.0935 | 7039 | 场效应晶体管射频 4V 12GHZ M04 4SMD | | ||
| California Eastern Laboratories(CEL) | ￥ 22.3629 | 58 | IC HJ-FET RF N-CH S02 4-MICROX | | ||
| California Eastern Laboratories(CEL) | ￥ 50.8999 | 80 | 场效应晶体管射频 30V 900MHZ 79A | | ||
| California Eastern Laboratories(CEL) | ￥ 0.0000 | 47 | 场效应晶体管射频 4V 12GHZ M04 4SMD | |
