GC11N65T
- 制造商零件编号
- GC11N65T
- 包装/箱
- -
- 数据表
- 下载
- 描述
- N650V,RD(MAX)<360M@10V,VTH2.5V~4
- 描述
- N650V,RD(MAX)<360M@10V,VTH2.5V~4
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Goford Semiconductor
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 11A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 901 pF @ 50 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 78W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 360mOhm @ 5.5A, 10V
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- 数据列表
- GC11N65T
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| GC11N65F | Goford Semiconductor | 3,000 | N650V,RD(MAX)<360M@10V,VTH2.5V~4 |
| GC11N65K | Goford Semiconductor | 3,000 | N650V,RD(MAX)<360M@10V,VTH2.5V~4 |
| GC11N65M | Goford Semiconductor | 3,000 | N650V,RD(MAX)<360M@10V,VTH2.5V~4 |