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GC11N65F

制造商零件编号: GC11N65F

制造商: Goford Semiconductor

包装/箱: -

数据表: 下载

描述: N650V,RD(MAX)<360M@10V,VTH2.5V~4

描述: N650V,RD(MAX)<360M@10V,VTH2.5V~4

支付方式: Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX

配送方式: DHL/UPS/TNT/FedEX/EMS

制造商 :: Goford Semiconductor

产品分类 :: 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :: -

Drain to Source Voltage (Vdss) :: -

Drive Voltage (Max Rds On, Min Rds On) :: -

FET Feature :: -

FET Type :: -

Gate Charge (Qg) (Max) @ Vgs :: -

Input Capacitance (Ciss) (Max) @ Vds :: -

Mounting Type :: -

Operating Temperature :: -

Package / Case :: -

Power Dissipation (Max) :: -

Product Status :: Active

Rds On (Max) @ Id, Vgs :: -

Supplier Device Package :: -

Technology :: -

Vgs (Max) :: -

Vgs(th) (Max) @ Id :: -

数据列表: GC11N65F

制造商相关产品

G4616

Goford Semiconductor

N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
GT090N06D52

Goford Semiconductor

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
G20N06D52

Goford Semiconductor

N60V,RD(MAX)<30M@10V,RD(MAX)<40M
G33N03D3

Goford Semiconductor

N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G06NP06S2

Goford Semiconductor

N/P60V,RD(MAX)<35M@10V,RD(MAX)<4

目录相关产品

IXFY36N20X3

IXYS

MOSFET N-CH 200V 36A TO252AA
IRFP7430PBF

Infineon Technologies

MOSFET N-CH 40V 195A TO247AC
IRFP4310ZPBF

Infineon Technologies

MOSFET N-CH 100V 120A TO247AC
PSMN3R5-80PS,127

Nexperia USA Inc.

MOSFET N-CH 80V 120A TO220AB
G3R350MT12D

GeneSiC Semiconductor

SIC MOSFET N-CH 11A TO247-3

相关产品

部分	制造商	库存	描述
GC1100003	Diodes Incorporated	3,000	CRYSTAL METAL CAN 49S/SMD T&R 1K
GC1100010	Diodes Incorporated	3,000	CRYSTAL METAL CAN 49S/SMD T&R 1K
GC1100011	Diodes Incorporated	3,000	CRYSTAL METAL CAN 49S/SMD T&R 1K
GC1100013	Diodes Incorporated	3,000	CRYSTAL METAL CAN 49S/SMD T&R 1K
GC1100021	Diodes Incorporated	3,000	CRYSTAL METAL CAN 49S/SMD T&R 1K
GC1115EVM	Texas Instruments	3,000	EVAL DAUGHTERBOARD-GC101
GC1115IZDJ	Rochester Electronics, LLC	13,631	IC WIDEBAND CFR PROCESSOR 256BGA
GC1115SEK	Texas Instruments	3,000	EVAL KIT FOR GC1115
GC11N65K	Goford Semiconductor	3,000	N650V,RD(MAX)<360M@10V,VTH2.5V~4
GC11N65M	Goford Semiconductor	3,000	N650V,RD(MAX)<360M@10V,VTH2.5V~4
GC11N65T	Goford Semiconductor	3,000	N650V,RD(MAX)<360M@10V,VTH2.5V~4