- 品牌：
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- Package / Case：
-
- Supplier Device Package：
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- Power Dissipation (Max)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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15 条记录
| 图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 | |
|---|---|---|---|---|---|---|---|
|
Infineon Technologies | SICFET N-CH 1.2KV 5... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 2... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 3... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 4... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 1... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 1... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 4... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 5... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | 1200V COOLSIC MOSF... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 1... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 1... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Rochester Electronics, LLC | SICFET N-CH 1.2KV 2... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | 1200V COOLSIC MOSF... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 3... |
1 |
3,000
In-stock
|
提交询价 | ||
|
|
Rochester Electronics, LLC | SIC DISCRETE |
1 |
3,000
In-stock
|
提交询价 |