IMW120R350M1HXKSA1
- 制造商零件编号
- IMW120R350M1HXKSA1
- 包装/箱
- -
- 数据表
- 下载
- 描述
- SICFET N-CH 1.2KV 4.7A TO247-3
- 描述
- SICFET N-CH 1.2KV 4.7A TO247-3
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Infineon Technologies
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 4.7A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 15V, 18V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5.3 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 182 pF @ 800 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 60W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 455mOhm @ 2A, 18V
- Supplier Device Package :
- PG-TO247-3-41
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +23V, -7V
- Vgs(th) (Max) @ Id :
- 5.7V @ 1mA
- 数据列表
- IMW120R350M1HXKSA1
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| IMW120R007M1HXKSA1 | Infineon Technologies | 3,000 | SIC DISCRETE |
| IMW120R014M1HXKSA1 | Infineon Technologies | 3,000 | SIC DISCRETE |
| IMW120R020M1HXKSA1 | Infineon Technologies | 3,000 | SIC DISCRETE |
| IMW120R030M1HXKSA1 | Infineon Technologies | 3,000 | SICFET N-CH 1.2KV 56A TO247-3 |
| IMW120R040M1HXKSA1 | Infineon Technologies | 3,000 | SIC DISCRETE |
| IMW120R045M1XKSA1 | Infineon Technologies | 3,000 | SICFET N-CH 1.2KV 52A TO247-3 |
| IMW120R060M1HXKSA1 | Infineon Technologies | 3,000 | SICFET N-CH 1.2KV 36A TO247-3 |
| IMW120R090M1HXKSA1 | Rochester Electronics, LLC | 3,000 | SICFET N-CH 1.2KV 26A TO247-3 |
| IMW120R140M1HXKSA1 | Infineon Technologies | 3,000 | SICFET N-CH 1.2KV 19A TO247-3 |
| IMW120R220M1HXKSA1 | Infineon Technologies | 3,000 | SICFET N-CH 1.2KV 13A TO247-3 |
| IMW120R220M1HXKSA1 | Rochester Electronics, LLC | 3,000 | SIC DISCRETE |