- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - JFET
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 50 mA @ 20 V
- Current Drain (Id) - Max :
- -
- Drain to Source Voltage (Vdss) :
- -
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 10pF @ 12V (VGS)
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 350 mW
- Product Status :
- Obsolete
- Resistance - RDS(On) :
- 30 Ohms
- Supplier Device Package :
- TO-92-3
- Voltage - Breakdown (V(BR)GSS) :
- 30 V
- Voltage - Cutoff (VGS off) @ Id :
- -
- 数据列表
- 2N5638
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| 2N5600 | Microchip Technology | 3,000 | POWER BJT |
| 2N5601 | Microchip Technology | 3,000 | POWER BJT |
| 2N5602 | Microchip Technology | 3,000 | POWER BJT |
| 2N5603 | Microchip Technology | 3,000 | POWER BJT |
| 2N5604 | Microchip Technology | 3,000 | POWER BJT |
| 2N5605 | Microchip Technology | 3,000 | POWER BJT |
| 2N5606 | Microchip Technology | 3,000 | POWER BJT |
| 2N5607 | Microchip Technology | 3,000 | POWER BJT |
| 2N5608 | Microchip Technology | 3,000 | POWER BJT |
| 2N5609 | Microchip Technology | 3,000 | POWER BJT |
| 2N5610 | Microchip Technology | 3,000 | POWER BJT |
| 2N5611 | Microchip Technology | 3,000 | POWER BJT |
| 2N5612 | Microchip Technology | 3,000 | POWER BJT |
| 2N5614 | Microchip Technology | 3,000 | POWER BJT |
| 2N5615 | Microchip Technology | 3,000 | POWER BJT |