- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - IGBT - 单
- Current - Collector (Ic) (Max) :
- 40 A
- Current - Collector Pulsed (Icm) :
- 160 A
- Gate Charge :
- 97 nC
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-3P-3, SC-65-3
- Power - Max :
- 160 W
- Product Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 60 ns
- Supplier Device Package :
- TO-3P
- Switching Energy :
- 160µJ (on), 200µJ (off)
- Td (on/off) @ 25°C :
- 15ns/65ns
- Test Condition :
- 300V, 20A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 20A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
- 数据列表
- SGH40N60UFDM1TU
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| SGH40N60UFDTU | Rochester Electronics, LLC | 117,929 | IGBT 600V 40A 160W TO3P |
| SGH40N60UFTU | Rochester Electronics, LLC | 76,647 | IGBT 600V 40A TO3P |
| SGH40N60UFTU | Rochester Electronics, LLC | 3,000 | INSULATED GATE BIPOLAR TRANSISTO |