- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 170mA (Ta)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 0.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 14 pF @ 20 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation (Max) :
- -
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 18Ohm @ 80mA, 10V
- Supplier Device Package :
- 3-CPH
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.6V @ 100µA
- 数据列表
- 1HP04CH-TL-W
