- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 120A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 170 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 215W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 6mOhm @ 60A, 10V
- Supplier Device Package :
- D²PAK
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- 数据列表
- NVB5426NT4G
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| NVB5404NT4G | onsemi | 3,000 | MOSFET N-CH 40V 24A D2PAK |
| NVB5405NT4G | Rochester Electronics, LLC | 5,600 | NVB5405 - SINGLE N-CHANNEL POWER |
| NVB5405NT4G | onsemi | 3,000 | MOSFET N-CH 40V 16.5A/116A D2PAK |
| NVB5860NLT4G | onsemi | 3,000 | MOSFET N-CH 60V 220A D2PAK-3 |
| NVB5860NT4G | onsemi | 3,000 | MOSFET N-CH 60V 220A D2PAK-3 |