RP1E100XNTR
- 制造商零件编号
- RP1E100XNTR
- 包装/箱
- -
- 数据表
- 下载
- 描述
- MOSFET N-CH 30V 10A MPT6
- 描述
- MOSFET N-CH 30V 10A MPT6
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Rohm Semiconductor
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 10A (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 11 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 800 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 6-SMD, Flat Leads
- Power Dissipation (Max) :
- 2W (Ta)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 10A, 10V
- Supplier Device Package :
- MPT6
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- 数据列表
- RP1E100XNTR
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|---|---|---|---|
| RP1E050RPTR | Rohm Semiconductor | 3,000 | MOSFET P-CH 30V 5A MPT6 |
| RP1E070XNTCR | Rohm Semiconductor | 3,000 | MOSFET N-CH 30V 7A MPT6 |
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| RP1E090XNTCR | Rohm Semiconductor | 3,000 | MOSFET N-CH 30V 9A MPT6 |
| RP1E100RPTR | Rohm Semiconductor | 3,000 | MOSFET P-CH 30V 10A MPT6 |
| RP1E125XNTR | Rohm Semiconductor | 3,000 | MOSFET N-CH 30V 12.5A MPT6 |