SI4660DY-T1-E3
- 制造商零件编号
- SI4660DY-T1-E3
- 制造商
- Vishay Siliconix
- 包装/箱
- -
- 数据表
- 下载
- 描述
- MOSFET N-CH 25V 23.1A 8SO
- 描述
- MOSFET N-CH 25V 23.1A 8SO
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Vishay Siliconix
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 23.1A (Tc)
- Drain to Source Voltage (Vdss) :
- 25 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2410 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SOIC (0.154", 3.90mm Width)
- Power Dissipation (Max) :
- 3.1W (Ta), 5.6W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 5.8mOhm @ 15A, 10V
- Supplier Device Package :
- 8-SOIC
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- 数据列表
- SI4660DY-T1-E3
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