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FDB039N06

制造商零件编号: FDB039N06

制造商: onsemi

包装/箱: -

数据表: 下载

描述: MOSFET N-CH 60V 120A TO263

描述: MOSFET N-CH 60V 120A TO263

支付方式: Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX

配送方式: DHL/UPS/TNT/FedEX/EMS

制造商 :: onsemi

产品分类 :: 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :: 120A (Tc)

Drain to Source Voltage (Vdss) :: 60 V

Drive Voltage (Max Rds On, Min Rds On) :: 10V

FET Feature :: -

FET Type :: N-Channel

Gate Charge (Qg) (Max) @ Vgs :: 133 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :: 8235 pF @ 25 V

Mounting Type :: Surface Mount

Operating Temperature :: -55°C ~ 175°C (TJ)

Package / Case :: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :: 231W (Tc)

Product Status :: Obsolete

Rds On (Max) @ Id, Vgs :: 3.9mOhm @ 75A, 10V

Supplier Device Package :: D2PAK (TO-263)

Technology :: MOSFET (Metal Oxide)

Vgs (Max) :: ±20V

Vgs(th) (Max) @ Id :: 4.5V @ 250µA

数据列表: FDB039N06

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相关产品

部分	制造商	库存	描述
FDB0105N407L	onsemi	3,000	MOSFET N-CH 40V 460A TO263-7
FDB0165N807L	onsemi	3,000	MOSFET N-CH 80V 310A TO263-7
FDB016N04AL7	onsemi	3,000	MOSFET N-CH 40V 160A TO263-7
FDB016N04AL7	Rochester Electronics, LLC	3,000	POWER FIELD-EFFECT TRANSISTOR, 1
FDB0170N607L	onsemi	3,000	MOSFET N-CH 60V 300A TO263-7
FDB0170N607L	Rochester Electronics, LLC	3,000	MOSFET N-CH 60V 300A TO263-7
FDB0190N807L	onsemi	3,000	MOSFET N-CH 80V 270A TO263-7
FDB024N04AL7	Rochester Electronics, LLC	30,608	MOSFET N-CH 40V 100A TO263-7
FDB024N06	onsemi	3,000	MOSFET N-CH 60V 120A D2PAK
FDB024N06	Rochester Electronics, LLC	3,000	POWER FIELD-EFFECT TRANSISTOR, 1
FDB024N08BL7	onsemi	3,000	MOSFET N-CH 80V 120A TO263-7
FDB0250N807L	onsemi	3,000	MOSFET N-CH 80V 240A TO263-7
FDB0250N807L	Rochester Electronics, LLC	3,000	MOSFET N-CH 80V 240A TO263-7
FDB0260N1007L	Rochester Electronics, LLC	3,000	MOSFET N-CH 100V 200A TO263-7
FDB0260N1007L	onsemi	3,000	MOSFET N-CH 100V 200A TO263-7