IPB11N03LA G

制造商零件编号
IPB11N03LA G
制造商
Infineon Technologies
包装/箱
-
数据表
下载
描述
MOSFET N-CH 25V 30A TO263-3
描述
MOSFET N-CH 25V 30A TO263-3
支付方式
Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
配送方式
DHL/UPS/TNT/FedEX/EMS
制造商 :
Infineon Technologies
产品分类 :
晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drain to Source Voltage (Vdss) :
25 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds :
1358 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
52W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
11.2mOhm @ 30A, 10V
Supplier Device Package :
PG-TO263-3-2
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 20µA
数据列表
IPB11N03LA G

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