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FQA10N80C

制造商零件编号: FQA10N80C

制造商: onsemi

包装/箱: -

数据表: 下载

描述: MOSFET N-CH 800V 10A TO3P

描述: MOSFET N-CH 800V 10A TO3P

支付方式: Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX

配送方式: DHL/UPS/TNT/FedEX/EMS

制造商 :: onsemi

产品分类 :: 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :: 10A (Tc)

Drain to Source Voltage (Vdss) :: 800 V

Drive Voltage (Max Rds On, Min Rds On) :: 10V

FET Feature :: -

FET Type :: N-Channel

Gate Charge (Qg) (Max) @ Vgs :: 58 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :: 2800 pF @ 25 V

Mounting Type :: Through Hole

Operating Temperature :: -55°C ~ 150°C (TJ)

Package / Case :: TO-3P-3, SC-65-3

Power Dissipation (Max) :: 240W (Tc)

Product Status :: Obsolete

Rds On (Max) @ Id, Vgs :: 1.1Ohm @ 5A, 10V

Supplier Device Package :: TO-3P

Technology :: MOSFET (Metal Oxide)

Vgs (Max) :: ±30V

Vgs(th) (Max) @ Id :: 5V @ 250µA

数据列表: FQA10N80C

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相关产品

部分	制造商	库存	描述
FQA10N60C	Rochester Electronics, LLC	44,527	MOSFET N-CH 600V 10A TO3P
FQA10N60C	onsemi	3,000	MOSFET N-CH 600V 10A TO3P
FQA10N80	Rochester Electronics, LLC	58,266	MOSFET N-CH 800V 9.8A TO3P
FQA10N80	onsemi	3,000	MOSFET N-CH 800V 9.8A TO3P
FQA10N80C	Rochester Electronics, LLC	7,600	MOSFET N-CH 800V 10A TO3P
FQA10N80C-F109	Rochester Electronics, LLC	3,000	MOSFET N-CH 800V 10A TO3P
FQA10N80_F109	onsemi	3,000	MOSFET N-CH 800V 9.8A TO3P
FQA11N90	Rochester Electronics, LLC	11,971	MOSFET N-CH 900V 11.4A TO3P
FQA11N90	onsemi	3,000	MOSFET N-CH 900V 11.4A TO3P
FQA11N90C	onsemi	3,000	MOSFET N-CH 900V 11A TO3P
FQA11N90C-F109	Rochester Electronics, LLC	3,000	MOSFET N-CH 900V 11A TO3P
FQA11N90C-F109	Rochester Electronics, LLC	3,000	POWER FIELD-EFFECT TRANSISTOR, 1
FQA12N60	Rochester Electronics, LLC	9,750	MOSFET N-CH 600V 12A TO3P
FQA12N60	onsemi	3,000	MOSFET N-CH 600V 12A TO3P
FQA12P20	onsemi	3,000	MOSFET P-CH 200V 12.6A TO3P