- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A (Ta)
- Drain to Source Voltage (Vdss) :
- 59 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 3V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 250 pF @ 35 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation (Max) :
- 1.69W (Ta)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 125mOhm @ 2.6A, 10V
- Supplier Device Package :
- SOT-223 (TO-261)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±15V
- Vgs(th) (Max) @ Id :
- 2.5V @ 100µA
- 数据列表
- NIF9N05CLT3G
制造商相关产品
目录相关产品
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| NIF9N05CLT1 | onsemi | 3,000 | MOSFET N-CH 52V 2.6A SOT223 |
| NIF9N05CLT1G | onsemi | 3,000 | MOSFET N-CH 59V 2.6A SOT223 |
| NIF9N05CLT3 | onsemi | 5,839 | MOSFET N-CH 52V 2.6A SOT223 |
| NIF9N05CLT3G-SY | Rochester Electronics, LLC | 8,000 | 2.6 A, 52 V, N-CHANNEL, LOGIC LE |