GT650N15K
- 制造商零件编号
- GT650N15K
- 包装/箱
- -
- 数据表
- 下载
- 描述
- N150V,RD(MAX)<65M@10V,VTH2.5V~4.
- 描述
- N150V,RD(MAX)<65M@10V,VTH2.5V~4.
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Goford Semiconductor
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Tc)
- Drain to Source Voltage (Vdss) :
- 150 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 600 pF @ 75 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 68W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 65mOhm @ 10A, 10V
- Supplier Device Package :
- TO-252
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250µA
- 数据列表
- GT650N15K
