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FQP11P06

制造商零件编号: FQP11P06

制造商: Rochester Electronics, LLC

包装/箱: -

数据表: 下载

描述: POWER FIELD-EFFECT TRANSISTOR, 1

描述: POWER FIELD-EFFECT TRANSISTOR, 1

支付方式: Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX

配送方式: DHL/UPS/TNT/FedEX/EMS

制造商 :: Rochester Electronics, LLC

产品分类 :: 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :: 11.4A (Tc)

Drain to Source Voltage (Vdss) :: 60 V

Drive Voltage (Max Rds On, Min Rds On) :: 10V

FET Feature :: -

FET Type :: P-Channel

Gate Charge (Qg) (Max) @ Vgs :: 17 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :: 550 pF @ 25 V

Mounting Type :: Through Hole

Operating Temperature :: -55°C ~ 175°C (TJ)

Package / Case :: TO-220-3

Power Dissipation (Max) :: 53W (Tc)

Product Status :: Active

Rds On (Max) @ Id, Vgs :: 175mOhm @ 5.7A, 10V

Supplier Device Package :: TO-220-3

Technology :: MOSFET (Metal Oxide)

Vgs (Max) :: ±25V

Vgs(th) (Max) @ Id :: 4V @ 250µA

数据列表: FQP11P06

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部分	制造商	库存	描述
FQP10N20	onsemi	3,000	MOSFET N-CH 200V 10A TO220-3
FQP10N20C	onsemi	3,000	MOSFET N-CH 200V 9.5A TO220-3
FQP10N20CTSTU	Rochester Electronics, LLC	3,000	MOSFET N-CH 200V 9.5A TO220-3
FQP10N20CTSTU	onsemi	3,000	MOSFET N-CH 200V 9.5A TO220-3
FQP10N20L	Rochester Electronics, LLC	3,000	N-CHANNEL POWER MOSFET
FQP10N60C	Rochester Electronics, LLC	3,000	MOSFET N-CH 600V 9.5A TO220-3
FQP10N60C	onsemi	3,000	MOSFET N-CH 600V 9.5A TO220-3
FQP11N40	Rochester Electronics, LLC	3,000	MOSFET N-CH 400V 11.4A TO220-3
FQP11N40	onsemi	3,000	MOSFET N-CH 400V 11.4A TO220-3
FQP11N40C	onsemi	3,000	MOSFET N-CH 400V 10.5A TO220-3
FQP11N50CF	Rochester Electronics, LLC	3,000	MOSFET N-CH 500V 11A TO220-3
FQP11N50CF	onsemi	3,000	MOSFET N-CH 500V 11A TO220-3
FQP11P06	Rochester Electronics, LLC	3,000	MOSFET P-CH 60V 11.4A TO220-3
FQP12N60	Rochester Electronics, LLC	9,664	MOSFET N-CH 600V 10.5A TO220-3
FQP12N60	onsemi	3,000	MOSFET N-CH 600V 10.5A TO220-3