- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 110A (Tc)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 255 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8320 pF @ 20 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 333W (Tj)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 2.6mOhm @ 80A, 10V
- Supplier Device Package :
- D2PAK (TO-263)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- 数据列表
- FDB9503L-F085
制造商相关产品
目录相关产品
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| FDB9403 | Rochester Electronics, LLC | 8,787 | N-CHANNEL, MOSFET |
| FDB9403-F085 | onsemi | 3,000 | MOSFET N-CH 40V 110A TO263AB |
| FDB9403L-F085 | Rochester Electronics, LLC | 3,408 | MOSFET N-CH 40V 110A D2PAK |
| FDB9403L-F085 | onsemi | 3,000 | MOSFET N-CH 40V 110A D2PAK |
| FDB9403_SN00268 | onsemi | 3,000 | MOSFET N-CH 40V 110A D2PAK |
| FDB9406-F085 | onsemi | 3,000 | MOSFET N-CH 40V 110A D2PAK |
| FDB9406L-F085 | Flip Electronics | 3,000 | MOSFET N-CH 40V 110A D2PAK |
| FDB9409-F085 | onsemi | 3,000 | MOSFET N-CH 40V 80A D2PAK |
| FDB9409L-F085 | onsemi | 3,000 | MOSFET N-CH 40V 90A D2PAK |
| FDB9506L-F085 | onsemi | 3,000 | MOSFET N-CH 30V |
| FDB9509L-F085 | onsemi | 3,000 | MOSFET 40V 110X72 MIL DPAK |