IGLD60R070D1AUMA3
- 制造商零件编号
- IGLD60R070D1AUMA3
- 包装/箱
- -
- 数据表
- 下载
- 描述
- GANFET N-CH
- 描述
- GANFET N-CH
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Infineon Technologies
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 15A (Tc)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 380 pF @ 400 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-LDFN Exposed Pad
- Power Dissipation (Max) :
- 114W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- PG-LSON-8-1
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- -10V
- Vgs(th) (Max) @ Id :
- 1.6V @ 2.6mA
- 数据列表
- IGLD60R070D1AUMA3
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| IGLD60R070D1AUMA1 | Infineon Technologies | 3,000 | GANFET N-CH 600V 15A LSON-8 |
| IGLD60R190D1AUMA1 | Infineon Technologies | 3,000 | MOSFET N-CH 600V 10A LSON-8 |
| IGLD60R190D1SAUMA1 | Infineon Technologies | 3,000 | GAN HV PG-LSON-8 |