RS1P600BETB1

制造商零件编号
RS1P600BETB1
制造商
Rohm Semiconductor
包装/箱
-
数据表
下载
描述
MOSFET N-CH 100V 17.5A/60A 8HSOP
描述
MOSFET N-CH 100V 17.5A/60A 8HSOP
支付方式
Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
配送方式
DHL/UPS/TNT/FedEX/EMS
制造商 :
Rohm Semiconductor
产品分类 :
晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
17.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2200 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
8-PowerTDFN
Power Dissipation (Max) :
3W (Ta), 35W (Tc)
Product Status :
Not For New Designs
Rds On (Max) @ Id, Vgs :
9.7mOhm @ 17.5A, 10V
Supplier Device Package :
8-HSOP
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 500µA
数据列表
RS1P600BETB1

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