TK90S06N1L,LQ
- 制造商零件编号
- TK90S06N1L,LQ
- 包装/箱
- -
- 数据表
- 下载
- 描述
- MOSFET N-CH 60V 90A TO252-3
- 描述
- MOSFET N-CH 60V 90A TO252-3
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Toshiba Semiconductor and Storage
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 90A (Ta)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 81 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 175°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 157W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 3.3mOhm @ 45A, 10V
- Supplier Device Package :
- DPAK+
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 500µA
- 数据列表
- TK90S06N1L,LQ
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| TK90S06N1L,LXHQ | Toshiba Semiconductor and Storage | 3,000 | MOSFET N-CH 60V 90A DPAK |