DMTH10H010LCT

制造商零件编号
DMTH10H010LCT
制造商
Diodes Incorporated
包装/箱
-
数据表
下载
描述
MOSFET N-CH 100V 108A TO220AB
描述
MOSFET N-CH 100V 108A TO220AB
支付方式
Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
配送方式
DHL/UPS/TNT/FedEX/EMS
制造商 :
Diodes Incorporated
产品分类 :
晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
108A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2592 pF @ 50 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-220-3
Power Dissipation (Max) :
2.4W (Ta), 166W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
9.5mOhm @ 13A, 10V
Supplier Device Package :
TO-220-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
数据列表
DMTH10H010LCT

制造商相关产品

目录相关产品

相关产品

部分 制造商 库存 描述
DMTH10H003SPSW-13 Diodes Incorporated 3,000 MOSFET BVDSS: 61V~100V POWERDI50
DMTH10H005LCT Diodes Incorporated 3,000 MOSFET N-CH 100V 140A TO220AB
DMTH10H005SCT Diodes Incorporated 3,000 MOSFET N-CH 100V 140A TO220AB
DMTH10H009LFG-13 Diodes Incorporated 3,000 MOSFET BVDSS: 61V~100V POWERDI33
DMTH10H009LFG-7 Diodes Incorporated 3,000 MOSFET BVDSS: 61V~100V POWERDI33
DMTH10H009LPS-13 Diodes Incorporated 3,000 MOSFET N-CH 100V PWRDI5060
DMTH10H009LPSQ-13 Diodes Incorporated 3,000 MOSFET BVDSS: 61V~100V POWERDI50
DMTH10H009SPS-13 Diodes Incorporated 3,000 MOSFET N-CH 100V PWRDI5060
DMTH10H009SPSQ-13 Diodes Incorporated 3,000 MOSFET BVDSS: 61V~100V POWERDI50
DMTH10H010LCTB-13 Diodes Incorporated 3,000 MOSFET N-CH 100V 108A TO220AB
DMTH10H010LPS-13 Diodes Incorporated 3,000 MOSFET N-CH 100V PWRDI5060
DMTH10H010SCT Diodes Incorporated 3,000 MOSFET N-CH 100V 100A TO220AB
DMTH10H010SPS-13 Diodes Incorporated 3,000 MOSFET N-CH 100V PWRDI5060
DMTH10H010SPSQ-13 Diodes Incorporated 3,000 MOSFET N-CH 100V PWRDI5060
DMTH10H015LK3-13 Diodes Incorporated 3,000 MOSFET N-CH 100V 52.5A TO252