TK3R2E06PL,S1X
- 制造商零件编号
- TK3R2E06PL,S1X
- 包装/箱
- -
- 数据表
- 下载
- 描述
- X35 PB-F POWER MOSFET TRANSISTOR
- 描述
- X35 PB-F POWER MOSFET TRANSISTOR
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Toshiba Semiconductor and Storage
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 100A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 71 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000 pF @ 30 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 175°C
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 168W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 3.2mOhm @ 50A, 10V
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 700µA
- 数据列表
- TK3R2E06PL,S1X
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| TK3R1A04PL,S4X | Toshiba Semiconductor and Storage | 3,000 | MOSFET N-CH 40V 82A TO220SIS |
| TK3R1E04PL,S1X | Toshiba Semiconductor and Storage | 3,000 | MOSFET N-CH 40V 100A TO220 |
| TK3R1P04PL,RQ | Toshiba Semiconductor and Storage | 3,000 | MOSFET N-CHANNEL 40V 58A DPAK |
| TK3R2A08QM,S4X | Toshiba Semiconductor and Storage | 3,000 | UMOS10 TO-220SIS 80V 3.2MOHM |
| TK3R2A10PL,S4X | Toshiba Semiconductor and Storage | 3,000 | X35 PB-F POWER MOSFET TRANSISTOR |
| TK3R3A06PL,S4X | Toshiba Semiconductor and Storage | 3,000 | X35 PB-F POWER MOSFET TRANSISTOR |
| TK3R3E08QM,S1X | Toshiba Semiconductor and Storage | 3,000 | UMOS10 TO-220AB 80V 3.3MOHM |
| TK3R9E10PL,S1X | Toshiba Semiconductor and Storage | 3,000 | X35 PB-F POWER MOSFET TRANSISTOR |