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FCP11N60F

制造商零件编号: FCP11N60F

制造商: onsemi

包装/箱: -

数据表: 下载

描述: MOSFET N-CH 600V 11A TO220-3

描述: MOSFET N-CH 600V 11A TO220-3

支付方式: Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX

配送方式: DHL/UPS/TNT/FedEX/EMS

制造商 :: onsemi

产品分类 :: 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :: 11A (Tc)

Drain to Source Voltage (Vdss) :: 600 V

Drive Voltage (Max Rds On, Min Rds On) :: 10V

FET Feature :: -

FET Type :: N-Channel

Gate Charge (Qg) (Max) @ Vgs :: 52 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :: 1490 pF @ 25 V

Mounting Type :: Through Hole

Operating Temperature :: -55°C ~ 150°C (TJ)

Package / Case :: TO-220-3

Power Dissipation (Max) :: 125W (Tc)

Product Status :: Active

Rds On (Max) @ Id, Vgs :: 380mOhm @ 5.5A, 10V

Supplier Device Package :: TO-220-3

Technology :: MOSFET (Metal Oxide)

Vgs (Max) :: ±30V

Vgs(th) (Max) @ Id :: 5V @ 250µA

数据列表: FCP11N60F

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相关产品

部分	制造商	库存	描述
FCP104N60	onsemi	3,000	MOSFET N-CH 600V 37A TO220-3
FCP104N60F	onsemi	3,000	MOSFET N-CH 600V 37A TO220-3
FCP110N65F	onsemi	3,000	MOSFET N-CH 650V 35A TO220-3
FCP11N60	Rochester Electronics, LLC	3,000	MOSFET N-CH 600V 11A TO220-3
FCP11N60F	Rochester Electronics, LLC	3,000	POWER FIELD-EFFECT TRANSISTOR, 1
FCP11N60N	onsemi	3,000	MOSFET N-CH 600V 10.8A TO220-3
FCP11N60N-F102	onsemi	3,000	MOSFET N-CH 600V 10.8A TO220F
FCP11N65	Rochester Electronics, LLC	3,093	1-ELEMENT, N-CHANNEL
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FCP1206C123G-H1	Cornell Dubilier Electronics (CDE)	3,000	CAP FILM 0.012UF 2% 16VDC 1206
FCP1206C123J	Cornell Dubilier Electronics (CDE)	3,000	CAP FILM 0.012UF 5% 16VDC 1206
FCP1206C123J-H1	Cornell Dubilier Electronics (CDE)	3,000	CAP FILM 0.012UF 5% 16VDC 1206
FCP1206C153G	Cornell Dubilier Electronics (CDE)	3,000	CAP FILM 0.015UF 2% 16VDC 1206
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FCP1206C153J	Cornell Dubilier Electronics (CDE)	3,000	CAP FILM 0.015UF 5% 16VDC 1206