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DMN6013LFGQ-7

制造商零件编号: DMN6013LFGQ-7

制造商: Diodes Incorporated

包装/箱: -

数据表: 下载

描述: MOSFET N-CH 60V 10.3A PWRDI3333

描述: MOSFET N-CH 60V 10.3A PWRDI3333

支付方式: Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX

配送方式: DHL/UPS/TNT/FedEX/EMS

制造商 :: Diodes Incorporated

产品分类 :: 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :: 10.3A (Ta), 45A (Tc)

Drain to Source Voltage (Vdss) :: 60 V

Drive Voltage (Max Rds On, Min Rds On) :: 4.5V, 10V

FET Feature :: -

FET Type :: N-Channel

Gate Charge (Qg) (Max) @ Vgs :: 55.4 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :: 2577 pF @ 30 V

Mounting Type :: Surface Mount

Operating Temperature :: -55°C ~ 150°C (TJ)

Package / Case :: 8-PowerVDFN

Power Dissipation (Max) :: 1W (Ta)

Product Status :: Active

Rds On (Max) @ Id, Vgs :: 13mOhm @ 10A, 10V

Supplier Device Package :: PowerDI3333-8

Technology :: MOSFET (Metal Oxide)

Vgs (Max) :: ±20V

Vgs(th) (Max) @ Id :: 3V @ 250µA

数据列表: DMN6013LFGQ-7

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DMN6013LFG-13	Diodes Incorporated	3,000	MOSFET N-CH 60V 10.3A PWRDI3333
DMN6013LFGQ-13	Diodes Incorporated	3,000	MOSFET N-CH 60V 10.3A PWRDI3333
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