IPD60R360P7SAUMA1

制造商零件编号
IPD60R360P7SAUMA1
制造商
Infineon Technologies
包装/箱
-
数据表
下载
描述
MOSFET N-CH 600V 9A TO252-3
描述
MOSFET N-CH 600V 9A TO252-3
支付方式
Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
配送方式
DHL/UPS/TNT/FedEX/EMS
制造商 :
Infineon Technologies
产品分类 :
晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
555 pF @ 400 V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
41W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
360mOhm @ 2.7A, 10V
Supplier Device Package :
PG-TO252-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 140µA
数据列表
IPD60R360P7SAUMA1

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