TK1K2A60F,S4X
- 制造商零件编号
- TK1K2A60F,S4X
- 包装/箱
- -
- 数据表
- 下载
- 描述
- MOSFET N-CH 600V 6A TO220SIS
- 描述
- MOSFET N-CH 600V 6A TO220SIS
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Toshiba Semiconductor and Storage
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 6A (Ta)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 740 pF @ 300 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation (Max) :
- 35W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 3A, 10V
- Supplier Device Package :
- TO-220SIS
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 630µA
- 数据列表
- TK1K2A60F,S4X
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| TK1K0A60F,S4X | Toshiba Semiconductor and Storage | 3,000 | X35 PB-F POWER MOSFET TRANSISTOR |
| TK1K7A60F,S4X | Toshiba Semiconductor and Storage | 3,000 | X35 PB-F POWER MOSFET TRANSISTOR |
| TK1K9A60F,S4X | Toshiba Semiconductor and Storage | 3,000 | MOSFET N-CH 600V 3.7A TO220SIS |