SUD23N06-31L-T4-E3
- 制造商零件编号
- SUD23N06-31L-T4-E3
- 制造商
- Vishay Siliconix
- 包装/箱
- -
- 数据表
- 下载
- 描述
- MOSFET N-CH 60V TO252
- 描述
- MOSFET N-CH 60V TO252
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Vishay Siliconix
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 23A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 670 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 3W (Ta), 100W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 31mOhm @ 15A, 10V
- Supplier Device Package :
- TO-252AA
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- 数据列表
- SUD23N06-31L-T4-E3
制造商相关产品
目录相关产品
相关产品
部分 | 制造商 | 库存 | 描述 |
---|---|---|---|
SUD20N10-66L-BE3 | Vishay Siliconix | 3,000 | MOSFET N-CH 100V 16.9A DPAK |
SUD20N10-66L-GE3 | Vishay Siliconix | 3,000 | MOSFET N-CH 100V 16.9A TO252 |
SUD23N06-31-BE3 | Vishay Siliconix | 3,000 | MOSFET N-CH 60V 9.1A/21.4A DPAK |
SUD23N06-31-GE3 | Vishay Siliconix | 3,000 | MOSFET N-CH 60V 21.4A TO252 |
SUD23N06-31-T4-GE3 | Vishay Siliconix | 3,000 | MOSFET N-CH 60V 21.4A TO252 |
SUD23N06-31L-E3 | Vishay Siliconix | 3,000 | MOSFET N-CH 60V TO252 |
SUD23N06-31L-T4BE3 | Vishay Siliconix | 3,000 | MOSFET N-CH 60V 9.1A/21.4A DPAK |
SUD25N04-25-E3 | Vishay Siliconix | 3,000 | MOSFET N-CH 40V 25A TO252 |
SUD25N04-25-T4-E3 | Vishay Siliconix | 3,000 | MOSFET N-CH 40V 25A TO252 |
SUD25N15-52-BE3 | Vishay Siliconix | 3,000 | MOSFET N-CH 150V 25A DPAK |
SUD25N15-52-E3 | Vishay Siliconix | 3,000 | MOSFET N-CH 150V 25A TO252 |
SUD25N15-52-T4-E3 | Vishay Siliconix | 3,000 | MOSFET N-CH 150V 25A TO252 |