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IPB015N08N5ATMA1

制造商零件编号: IPB015N08N5ATMA1

制造商: Infineon Technologies

包装/箱: -

数据表: 下载

描述: MOSFET N-CH 80V 180A TO263-7

描述: MOSFET N-CH 80V 180A TO263-7

支付方式: Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX

配送方式: DHL/UPS/TNT/FedEX/EMS

制造商 :: Infineon Technologies

产品分类 :: 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :: 180A (Tc)

Drain to Source Voltage (Vdss) :: 80 V

Drive Voltage (Max Rds On, Min Rds On) :: 6V, 10V

FET Feature :: -

FET Type :: N-Channel

Gate Charge (Qg) (Max) @ Vgs :: 222 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :: 16900 pF @ 40 V

Mounting Type :: Surface Mount

Operating Temperature :: -55°C ~ 175°C (TJ)

Package / Case :: TO-263-7, D²Pak (6 Leads + Tab)

Power Dissipation (Max) :: 375W (Tc)

Product Status :: Active

Rds On (Max) @ Id, Vgs :: 1.5mOhm @ 100A, 10V

Supplier Device Package :: PG-TO263-7

Technology :: MOSFET (Metal Oxide)

Vgs (Max) :: ±20V

Vgs(th) (Max) @ Id :: 3.8V @ 279µA

数据列表: IPB015N08N5ATMA1

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IPB009N03LGATMA1	Infineon Technologies	3,000	MOSFET N-CH 30V 180A TO263-7
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IPB011N04LGATMA1	Infineon Technologies	3,000	MOSFET N-CH 40V 180A TO263-7
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IPB014N06NATMA1	Infineon Technologies	3,000	MOSFET N-CH 60V 34A/180A TO263-7
IPB015N04LGATMA1	Infineon Technologies	3,000	MOSFET N-CH 40V 120A D2PAK
IPB015N04NGATMA1	Infineon Technologies	3,000	MOSFET N-CH 40V 120A D2PAK
IPB016N06L3GATMA1	Infineon Technologies	3,000	MOSFET N-CH 60V 180A TO263-7
IPB016N08NF2SATMA1	Infineon Technologies	3,000	TRENCH 40<-<100V PG-TO263-3
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IPB017N08N5ATMA1	Infineon Technologies	3,000	MOSFET N-CH 80V 120A D2PAK
IPB017N10N5ATMA1	Infineon Technologies	3,000	MOSFET N-CH 100V 180A TO263-7
IPB017N10N5LFATMA1	Infineon Technologies	3,000	MOSFET N-CH 100V 180A TO263-7
IPB019N06L3GATMA1	Infineon Technologies	3,000	MOSFET N-CH 60V 120A D2PAK
IPB019N08N3GATMA1	Infineon Technologies	3,000	MOSFET N-CH 80V 180A TO263-7