IQE013N04LM6CGATMA1
- 制造商零件编号
- IQE013N04LM6CGATMA1
- 包装/箱
- -
- 数据表
- 下载
- 描述
- 40V N-CH FET SOURCE-DOWN CG 3X3
- 描述
- 40V N-CH FET SOURCE-DOWN CG 3X3
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Infineon Technologies
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 31A (Ta), 205A (Tc)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900 pF @ 20 V
- Mounting Type :
- Surface Mount, Wettable Flank
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Power Dissipation (Max) :
- 2.5W (Ta), 107W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 1.35mOhm @ 20A, 10V
- Supplier Device Package :
- PG-TTFN-9-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2V @ 51µA
- 数据列表
- IQE013N04LM6CGATMA1
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| IQE006NE2LM5ATMA1 | Infineon Technologies | 3,000 | MOSFET N-CH 25V 41A/298A 8TSON |
| IQE006NE2LM5CGATMA1 | Infineon Technologies | 3,000 | MOSFET N-CH 25V 41A/298A IPAK |
| IQE008N03LM5ATMA1 | Infineon Technologies | 3,000 | TRENCH <= 40V PG-TSON-8 |
| IQE008N03LM5CGATMA1 | Infineon Technologies | 4,164 | TRENCH <= 40V PG-TTFN-9 |
| IQE013N04LM6ATMA1 | Infineon Technologies | 7,500 | MOSFET N-CH 40V 31A/205A 8TSON |
| IQE030N06NM5ATMA1 | Infineon Technologies | 3,000 | TRENCH 40<-<100V PG-TSON-8 |
| IQE030N06NM5CGATMA1 | Infineon Technologies | 3,000 | TRENCH 40<-<100V PG-TTFN-9 |
| IQE050N08NM5ATMA1 | Infineon Technologies | 3,000 | TRENCH 40<-<100V PG-TSON-8 |
| IQE050N08NM5CGATMA1 | Infineon Technologies | 3,000 | TRENCH 40<-<100V PG-TTFN-9 |
| IQE065N10NM5ATMA1 | Infineon Technologies | 3,000 | TRENCH >=100V PG-TSON-8 |
| IQE065N10NM5CGATMA1 | Infineon Technologies | 3,000 | TRENCH >=100V PG-TTFN-9 |