FQA9N90-F109
- 制造商零件编号
- FQA9N90-F109
- 包装/箱
- -
- 数据表
- 下载
- 描述
- POWER FIELD-EFFECT TRANSISTOR, 8
- 描述
- POWER FIELD-EFFECT TRANSISTOR, 8
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Rochester Electronics, LLC
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 8.6A (Tc)
- Drain to Source Voltage (Vdss) :
- 900 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-3P-3, SC-65-3
- Power Dissipation (Max) :
- 240W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 1.3Ohm @ 4.3A, 10V
- Supplier Device Package :
- TO-3PN
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250µA
- 数据列表
- FQA9N90-F109
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|---|---|---|---|
| FQA90N08 | onsemi | 3,000 | MOSFET N-CH 80V 90A TO3PN |
| FQA90N10V2 | Rochester Electronics, LLC | 3,000 | MOSFET N-CH 100V 105A TO3P |
| FQA90N10V2 | onsemi | 3,000 | MOSFET N-CH 100V 105A TO3P |
| FQA90N15 | Rochester Electronics, LLC | 3,000 | MOSFET N-CH 150V 90A TO3PN |
| FQA90N15 | Rochester Electronics, LLC | 3,000 | POWER FIELD-EFFECT TRANSISTOR, 9 |
| FQA90N15-F109 | onsemi | 3,000 | MOSFET N-CH 150V 90A TO3PN |
| FQA9N50 | Rochester Electronics, LLC | 3,000 | MOSFET N-CH 500V 9.6A TO3P |
| FQA9N50 | onsemi | 3,000 | MOSFET N-CH 500V 9.6A TO3P |
| FQA9N90 | Rochester Electronics, LLC | 3,000 | N-CHANNEL POWER MOSFET |
| FQA9N90-F109 | Rochester Electronics, LLC | 3,000 | MOSFET N-CH 900V 8.6A TO3PN |
| FQA9N90C | onsemi | 3,000 | MOSFET N-CH 900V 9A TO3P |
| FQA9N90C-F109 | Rochester Electronics, LLC | 3,000 | MOSFET N-CH 900V 9A TO3P |
| FQA9P25 | onsemi | 3,000 | MOSFET P-CH 250V 10.5A TO3P |
| FQA9P25 | Rochester Electronics, LLC | 3,000 | POWER FIELD-EFFECT TRANSISTOR, 1 |