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FQI17P10TU

制造商零件编号: FQI17P10TU

制造商: Rochester Electronics, LLC

包装/箱: -

数据表: 下载

描述: P-CHANNEL POWER MOSFET

描述: P-CHANNEL POWER MOSFET

支付方式: Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX

配送方式: DHL/UPS/TNT/FedEX/EMS

制造商 :: Rochester Electronics, LLC

产品分类 :: 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :: 16.5A (Tc)

Drain to Source Voltage (Vdss) :: 100 V

Drive Voltage (Max Rds On, Min Rds On) :: 10V

FET Feature :: -

FET Type :: P-Channel

Gate Charge (Qg) (Max) @ Vgs :: 39 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :: 1100 pF @ 25 V

Mounting Type :: Through Hole

Operating Temperature :: -55°C ~ 175°C (TJ)

Package / Case :: TO-262-3 Long Leads, I²Pak, TO-262AA

Power Dissipation (Max) :: 3.75W (Ta), 100W (Tc)

Product Status :: Active

Rds On (Max) @ Id, Vgs :: 190mOhm @ 8.25A, 10V

Supplier Device Package :: I2PAK (TO-262)

Technology :: MOSFET (Metal Oxide)

Vgs (Max) :: ±30V

Vgs(th) (Max) @ Id :: 4V @ 250µA

数据列表: FQI17P10TU

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FQI12N60TU	Rochester Electronics, LLC	3,000	MOSFET N-CH 600V 10.5A I2PAK
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FQI13N06LTU	Rochester Electronics, LLC	3,000	MOSFET N-CH 60V 13.6A I2PAK
FQI13N06LTU	onsemi	3,000	MOSFET N-CH 60V 13.6A I2PAK