- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A (Ta)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1090 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerWDFN
- Power Dissipation (Max) :
- 2.1W (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 4.4A, 10V
- Supplier Device Package :
- 8-MLP (3.3x3.3)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- 数据列表
- FDM3622
