IPB530N15N3GATMA1
- 制造商零件编号
- IPB530N15N3GATMA1
- 包装/箱
- -
- 数据表
- 下载
- 描述
- MOSFET N-CH 150V 21A D2PAK
- 描述
- MOSFET N-CH 150V 21A D2PAK
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Infineon Technologies
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 21A (Tc)
- Drain to Source Voltage (Vdss) :
- 150 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 8V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 887 pF @ 75 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 68W (Tc)
- Product Status :
- Last Time Buy
- Rds On (Max) @ Id, Vgs :
- 53mOhm @ 18A, 10V
- Supplier Device Package :
- PG-TO263-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 35µA
- 数据列表
- IPB530N15N3GATMA1
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