- 制造商 :
- UnitedSiC
- 产品分类 :
- 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 106A (Tc)
- Drain to Source Voltage (Vdss) :
- 750 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 12V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 75 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3340 pF @ 400 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-247-4
- Power Dissipation (Max) :
- 375W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 11.5mOhm @ 70A, 12V
- Supplier Device Package :
- TO-247-4
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 5.5V @ 10mA
- 数据列表
- UJ4SC075009K4S
制造商相关产品
目录相关产品
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| UJ4SC075006K4S | UnitedSiC | 3,000 | 750V/6MOHM, SIC, STACKED CASCODE |
| UJ4SC075011K4S | UnitedSiC | 3,000 | 750V/11MOHM, SIC, STACKED CASCOD |