- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA, 10V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 200 mW
- Product Status :
- Obsolete
- Supplier Device Package :
- SC-59
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- 数据列表
- MSB709-RT1
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| MSB709 | Rochester Electronics, LLC | 3,000 | PDQ - SMALL SIG GEN PURP |
| MSB709-RT1G | onsemi | 578,448 | TRANS PNP 45V 0.1A SC59 |
| MSB709-RT2 | Rochester Electronics, LLC | 81,000 | TRANS GP BJT PNP 45V 0.1A 3PIN S |
| MSB710-RT1 | onsemi | 42,000 | TRANS PNP 50V 0.5A SC59 |
| MSB710-RT1G | onsemi | 69,000 | TRANS PNP 50V 0.5A SC59 |