IKP15N65H5XKSA1718
- 制造商零件编号
- IKP15N65H5XKSA1718
- 包装/箱
- -
- 数据表
- 下载
- 描述
- INSULATED GATE BIPOLAR TRANSISTO
- 描述
- INSULATED GATE BIPOLAR TRANSISTO
- 支付方式
- Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX
- 配送方式
- DHL/UPS/TNT/FedEX/EMS
- 制造商 :
- Rochester Electronics, LLC
- 产品分类 :
- 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- -
- Current - Collector Cutoff (Max) :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Frequency - Transition :
- -
- Mounting Type :
- -
- Operating Temperature :
- -
- Package / Case :
- -
- Power - Max :
- -
- Product Status :
- Active
- Supplier Device Package :
- -
- Transistor Type :
- -
- Vce Saturation (Max) @ Ib, Ic :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- -
- 数据列表
- IKP15N65H5XKSA1718
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| IKP10N60TXKSA1 | Infineon Technologies | 3,000 | IGBT 600V 20A 110W TO220-3 |
| IKP15N60TXKSA1 | Infineon Technologies | 3,000 | IGBT 600V 30A 130W TO220-3 |
| IKP15N65F5 | Rochester Electronics, LLC | 3,000 | IGBT 650V 30A 105W PG-TO220-3 |
| IKP15N65F5XKSA1 | Rochester Electronics, LLC | 3,000 | IGBT 650V 30A TO220-3 |
| IKP15N65H5XKSA1 | Rochester Electronics, LLC | 3,000 | IGBT 650V 30A TO220-3 |