- 制造商 :
- onsemi
- 产品分类 :
- 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 50 A
- Current - Collector Cutoff (Max) :
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 25A, 2V
- Frequency - Transition :
- 2MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- TO-204AE
- Power - Max :
- 300 W
- Product Status :
- Active
- Supplier Device Package :
- TO-204 (TO-3)
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 10A, 50A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- 数据列表
- 2N5686G
制造商相关产品
目录相关产品
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| 2N5600 | Microchip Technology | 3,000 | POWER BJT |
| 2N5601 | Microchip Technology | 3,000 | POWER BJT |
| 2N5602 | Microchip Technology | 3,000 | POWER BJT |
| 2N5603 | Microchip Technology | 3,000 | POWER BJT |
| 2N5604 | Microchip Technology | 3,000 | POWER BJT |
| 2N5605 | Microchip Technology | 3,000 | POWER BJT |
| 2N5606 | Microchip Technology | 3,000 | POWER BJT |
| 2N5607 | Microchip Technology | 3,000 | POWER BJT |
| 2N5608 | Microchip Technology | 3,000 | POWER BJT |
| 2N5609 | Microchip Technology | 3,000 | POWER BJT |
| 2N5610 | Microchip Technology | 3,000 | POWER BJT |
| 2N5611 | Microchip Technology | 3,000 | POWER BJT |
| 2N5612 | Microchip Technology | 3,000 | POWER BJT |
| 2N5614 | Microchip Technology | 3,000 | POWER BJT |
| 2N5615 | Microchip Technology | 3,000 | POWER BJT |