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RN1702,LF

制造商零件编号: RN1702,LF

制造商: Toshiba Semiconductor and Storage

包装/箱: -

数据表: 下载

描述: NPNX2 BRT Q1BSR10KOHM Q1BER10KOH

描述: NPNX2 BRT Q1BSR10KOHM Q1BER10KOH

支付方式: Paypal/Wire transfer/Stripe/ Visa/Mastercard/AMEX

配送方式: DHL/UPS/TNT/FedEX/EMS

制造商 :: Toshiba Semiconductor and Storage

产品分类 :: 晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :: 100mA

Current - Collector Cutoff (Max) :: 500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :: 50 @ 10mA, 5V

Frequency - Transition :: 250MHz

Mounting Type :: Surface Mount

Package / Case :: 5-TSSOP, SC-70-5, SOT-353

Power - Max :: 200mW

Product Status :: Active

Resistor - Base (R1) :: 10kOhms

Resistor - Emitter Base (R2) :: 10kOhms

Supplier Device Package :: USV

Transistor Type :: 2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :: 300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :: 50V

数据列表: RN1702,LF

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相关产品

部分	制造商	库存	描述
RN1701,LF	Toshiba Semiconductor and Storage	7,361	NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
RN1701JE(TE85L,F)	Toshiba Semiconductor and Storage	12,440	TRANS 2NPN PREBIAS 0.1W ESV
RN1702JE(TE85L,F)	Toshiba Semiconductor and Storage	3,000	TRANS 2NPN PREBIAS 0.1W ESV
RN1703,LF	Toshiba Semiconductor and Storage	6,000	NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
RN1703JE(TE85L,F)	Toshiba Semiconductor and Storage	3,000	TRANS 2NPN PREBIAS 0.1W ESV
RN1704,LF	Toshiba Semiconductor and Storage	5,890	NPNX2 BRT Q1BSR47KOHM Q1BER47KOH
RN1704JE(TE85L,F)	Toshiba Semiconductor and Storage	3,000	TRANS 2NPN PREBIAS 0.1W ESV
RN1705,LF	Toshiba Semiconductor and Storage	3,000	NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO
RN1705JE(TE85L,F)	Toshiba Semiconductor and Storage	3,000	TRANS 2NPN PREBIAS 0.1W ESV
RN1706,LF	Toshiba Semiconductor and Storage	3,000	NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
RN1706JE(TE85L,F)	Toshiba Semiconductor and Storage	3,000	TRANS 2NPN PREBIAS 0.1W ESV
RN1707,LF	Toshiba Semiconductor and Storage	8,985	NPNX2 BRT Q1BSR10KOHM Q1BER47KOH
RN1707JE(TE85L,F)	Toshiba Semiconductor and Storage	3,331	NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
RN1708,LF	Toshiba Semiconductor and Storage	3,000	NPNX2 BRT Q1BSR22KOHM Q1BER47KOH
RN1708JE(TE85L,F)	Toshiba Semiconductor and Storage	3,890	NPN X 2 BRT Q1BSR=22KOHM Q1BER=4