Mounting Type:
Access Time:
Memory Format:
Write Cycle Time - Word, Page:
387 条记录
图片 型号 品牌 描述 起订量 库存 操作
IS43LD32320C-25BLI ISSI, Integrated Silicon Solution Inc
IC DRAM 1GBIT PAR...
1
RFQ
3,000
In-stock
提交询价
AS4C128M32MD2A-25BIN Alliance Memory, Inc.
IC DRAM 4GBIT PAR...
1
RFQ
3,000
In-stock
提交询价
AS4C128M32MD2A-18BIN Alliance Memory, Inc.
IC DRAM 4GBIT PAR...
1
RFQ
3,000
In-stock
提交询价
AS4C64M32MD2A-25BIN Alliance Memory, Inc.
IC DRAM 2GBIT PAR...
1
RFQ
3,000
In-stock
提交询价
IS43LD16640C-25BLI ISSI, Integrated Silicon Solution Inc
IC DRAM 1GBIT PAR...
1
RFQ
4,955
In-stock
提交询价
W978H6KBVX2E Winbond Electronics
IC DRAM 256MBIT PA...
1
RFQ
3,000
In-stock
提交询价
W979H2KBVX2I Winbond Electronics
IC DRAM 512MBIT PA...
1
RFQ
3,000
In-stock
提交询价
AS4C8M32MD2A-25BCN Alliance Memory, Inc.
IC DRAM 256MBIT PA...
1
RFQ
3,000
In-stock
提交询价
AS4C8M32MSA-6BIN Alliance Memory, Inc.
IC DRAM 256MBIT PA...
1
RFQ
3,000
In-stock
提交询价
IS43LD16640C-25BLI-TR ISSI, Integrated Silicon Solution Inc
IC DRAM 1GBIT PAR...
1
RFQ
3,000
In-stock
提交询价
AS4C32M32MD2A-25BIN Alliance Memory, Inc.
IC DRAM 1GBIT PAR...
1
RFQ
3,000
In-stock
提交询价
IS43LD32320C-25BLI-TR ISSI, Integrated Silicon Solution Inc
IC DRAM 1GBIT PAR...
1
RFQ
3,000
In-stock
提交询价
AS4C128M16MD2A-25BIN Alliance Memory, Inc.
IC DRAM 2GBIT PAR...
1
RFQ
3,000
In-stock
提交询价
EDB5432BEBH-1DIT-F-R TR Micron Technology Inc.
IC DRAM 512MBIT PA...
1
RFQ
3,000
In-stock
提交询价
W979H6KBVX2E TR Winbond Electronics
IC DRAM 512MBIT PA...
1
RFQ
3,000
In-stock
提交询价
W979H6KBVX2I TR Winbond Electronics
IC DRAM 512MBIT PA...
1
RFQ
3,000
In-stock
提交询价
AS4C8M32MSA-6BINTR Alliance Memory, Inc.
IC DRAM 256MBIT PA...
1
RFQ
3,000
In-stock
提交询价
W978H2KBVX2E Winbond Electronics
IC DRAM 256MBIT PA...
1
RFQ
3,000
In-stock
提交询价
W978H2KBVX2I Winbond Electronics
IC DRAM 256MBIT PA...
1
RFQ
3,000
In-stock
提交询价
W979H2KBVX2E Winbond Electronics
IC DRAM 512MBIT PA...
1
RFQ
3,000
In-stock
提交询价
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