Product Status:
Operating Temperature:
Package / Case:
Supplier Device Package:
Reverse Recovery Time (trr):
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Current - Collector Pulsed (Icm):
Switching Energy:
Test Condition:
图片 型号 品牌 描述 起订量 库存 操作
GT30J121(Q) Toshiba Semiconductor and Storage
IGBT 600V 30A 170W TO...
1
RFQ
3,000
In-stock
提交询价
NTE3322 NTE Electronics, Inc
IGBT-900V 60AMP
1
RFQ
3,000
In-stock
提交询价
GT60N321(Q) Toshiba Semiconductor and Storage
IGBT 1000V 60A 170W TO...
1
RFQ
3,000
In-stock
提交询价
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