Supplier Device Package:
Power Dissipation (Max):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Drive Voltage (Max Rds On, Min Rds On):
图片 型号 品牌 描述 起订量 库存 操作
TP65H050WS Transphorm
GANFET N-CH 650V 34A...
1
RFQ
3,000
In-stock
提交询价
TP65H050WSQA Transphorm
GANFET N-CH 650V 36A...
1
RFQ
3,000
In-stock
提交询价
GAN063-650WSAQ Nexperia USA Inc.
GANFET N-CH 650V 34....
1
RFQ
3,000
In-stock
提交询价
TP65H050G4WS Transphorm
650 V 34 A GAN FET
1
RFQ
3,000
In-stock
提交询价
TP65H050G4BS Transphorm
650 V 34 A GAN FET
1
RFQ
3,000
In-stock
提交询价
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