Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
图片 型号 品牌 描述 起订量 库存 操作
IPB13N03LB G Infineon Technologies
MOSFET N-CH 30V 30A...
1
RFQ
3,000
In-stock
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IPB10N03LB Infineon Technologies
MOSFET N-CH 30V 50A...
1
RFQ
3,000
In-stock
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IPB10N03LB G Infineon Technologies
MOSFET N-CH 30V 50A...
1
RFQ
3,000
In-stock
提交询价
IPB13N03LB Infineon Technologies
MOSFET N-CH 30V 30A...
1
RFQ
3,000
In-stock
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IPB075N04LGATMA1 Infineon Technologies
MOSFET N-CH 40V 50A...
1
RFQ
3,000
In-stock
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