Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
图片 型号 品牌 描述 起订量 库存 操作
IPD088N06N3GBTMA1 Infineon Technologies
MOSFET N-CH 60V 50A...
1
RFQ
3,000
In-stock
提交询价
IPB80N06S209ATMA2 Infineon Technologies
MOSFET N-CH 55V 80A...
1
RFQ
3,000
In-stock
提交询价
IPB80N06S209ATMA1 Infineon Technologies
MOSFET N-CH 55V 80A...
1
RFQ
3,000
In-stock
提交询价
IPD088N04LGBTMA1 Infineon Technologies
MOSFET N-CH 40V 50A...
1
RFQ
3,000
In-stock
提交询价
IPD088N06N3GATMA1 Infineon Technologies
MOSFET N-CH 60V 50A...
1
RFQ
3,000
In-stock
提交询价
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