Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
图片 型号 品牌 描述 起订量 库存 操作
FCH170N60 Rochester Electronics, LLC
MOSFET N-CH 600V 22A...
1
RFQ
3,000
In-stock
提交询价
FCP170N60 Rochester Electronics, LLC
MOSFET N-CH 600V 22A...
1
RFQ
3,000
In-stock
提交询价
SIHH21N65E-T1-GE3 Vishay Siliconix
MOSFET N-CH 650V 20....
1
RFQ
3,000
In-stock
提交询价
FCH170N60 onsemi
MOSFET N-CH 600V 22A...
1
RFQ
3,000
In-stock
提交询价
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