Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Vgs (Max):
图片 型号 品牌 描述 起订量 库存 操作
IXTN600N04T2 IXYS
MOSFET N-CH 40V 600A...
1
RFQ
3,000
In-stock
提交询价
IPB180N03S4L01ATMA1 Infineon Technologies
MOSFET N-CH 30V 180A...
1
RFQ
3,000
In-stock
提交询价
IPB180N03S4L-01 Rochester Electronics, LLC
IPB180N03 - 20V-40V N-C...
1
RFQ
3,000
In-stock
提交询价
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